ESD的另一种情况:CDE " }1 m& x1 ] `& q: X. K8 [% I6 S; ^- QCDE--Cable Discharge Event8 ?- ]. ~6 [, C% L
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Investigation on Robustness of CMOS Devices Against Cable Discharge Event (CDE) Under Different Layout Parameters in a Deep-Submicrometer CMOS Technology . }% D6 K1 L5 C) R ) z+ q" A) V; q
Abstract—Cable discharge events (CDEs) have been found 2 r5 k7 R5 J. O to be the major root cause of inducing hardware damage on 2 ^* Q# {+ [% N) Y8 C7 H) z Ethernet ICs of communication interfaces in real applications. Still,2 [5 p, K. B1 s5 I+ j$ o7 P# E
there is no device-level evaluation method to investigate the ro 7 B' _2 J& s$ n; Z bustness of complementary metal–oxide–semiconductor (CMOS)$ S. E( O$ U$ a; _6 b* u/ \
devices against a CDE for a layout optimization in silicon chips.