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For ESD test (HBM)
$ \. B2 l# w, n0 nThe following are the test combination:
/ V/ A5 O7 n& z, D3 _" X1. Power to Power
]( U' y s# }- F6 C9 G/ D% {0 ^2. Power to Ground
+ ? e9 g& P! N& V0 w' W3. IO to Power
% B; C5 n3 l8 P5 w8 H+ T4. Io to Ground
6 Q" J. Y. c: z% B1 U5. IO to IO
2 d2 y& {/ b ^(different power domain need to be treated as different power. For ground usually you can treat as one group_silicon use substrate as common ground. But if you measure two different ground pin/ball > 2ohms. It should be seperated as 2 grond.), U5 ?* i2 M7 |: I
6 B/ j* D" k) A' i+ ethe total zap time fomula will be~ 2(+/- polarity) X (IO#X(P#+G#)+IO#+P#X(P#-1)X(P#-2)X...X1+P#XG)
; i) T4 u) W# xFor example: You have IO1/IO2/IO3/P1/P2/G1
4 S" B0 O0 R. p% }2x((3X(2+1)+3+2X1+2X1)=25(multiple the zap interval)5 F" A3 O" U9 J! s8 }
So for high pin count it will take a lot of time. But it won't take more than a week(for one chip). 0 S5 C" w! u# f2 j! I8 g
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For your reference. |
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