|
For ESD test (HBM) t: l6 M9 B2 F& W& V
The following are the test combination:4 C' @0 e/ ]" ~7 _. n' F
1. Power to Power" r, h' ?- }* w, {
2. Power to Ground8 l4 z6 M: e. t- ~7 }
3. IO to Power
; m9 Q/ j; X$ m: }3 M# i4. Io to Ground+ P* s+ r, ]1 K5 n; \% T/ W- V
5. IO to IO" P( Y) U; K, O" C: \, B( r- V0 \
(different power domain need to be treated as different power. For ground usually you can treat as one group_silicon use substrate as common ground. But if you measure two different ground pin/ball > 2ohms. It should be seperated as 2 grond.)
, M, i6 F8 z5 n+ M1 N$ k. M4 b% w9 G& t
the total zap time fomula will be~ 2(+/- polarity) X (IO#X(P#+G#)+IO#+P#X(P#-1)X(P#-2)X...X1+P#XG)
* l( _( [1 R9 U( |+ I6 M3 MFor example: You have IO1/IO2/IO3/P1/P2/G1
9 \ j1 I4 o4 K5 R* B2x((3X(2+1)+3+2X1+2X1)=25(multiple the zap interval)
& ^! b% i# g( M8 _* a* TSo for high pin count it will take a lot of time. But it won't take more than a week(for one chip).
- v3 k; R O, F# U8 Z7 ]8 [
+ \- i% P* o0 k! b' T3 vFor your reference. |
|