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For ESD test (HBM)# u8 j; _+ [* v4 _. d
The following are the test combination:2 e) L, R3 `: i
1. Power to Power: B7 h2 z3 d2 i
2. Power to Ground
2 P! a, t! o9 Z7 J1 y, x3. IO to Power1 B) O0 J' H- L' c/ N
4. Io to Ground* L+ l7 ^( y' Y
5. IO to IO) n9 q v8 K- \/ ^" _
(different power domain need to be treated as different power. For ground usually you can treat as one group_silicon use substrate as common ground. But if you measure two different ground pin/ball > 2ohms. It should be seperated as 2 grond.)
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- D: h$ G# ^0 r' w: U3 A$ Pthe total zap time fomula will be~ 2(+/- polarity) X (IO#X(P#+G#)+IO#+P#X(P#-1)X(P#-2)X...X1+P#XG)+ l4 J4 v9 S9 M2 j6 N& l+ w% E
For example: You have IO1/IO2/IO3/P1/P2/G1& L1 C: W2 s) i/ O7 V
2x((3X(2+1)+3+2X1+2X1)=25(multiple the zap interval)
1 d$ j' F e b3 \/ QSo for high pin count it will take a lot of time. But it won't take more than a week(for one chip).
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For your reference. |
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