hspice 問題 有關mos內部電容指令

0918429587

mos內部電容要看Cgs Cgd Cdb Cbs
2 ]. V+ {$ e: k
' F. @; t5 S, \) q& T要怎麼定義用
plot LX??

請各位幫忙一下

小朱仔

直接下.op及.probe
# F$ f' J/ x- h, g+ E- Z找*.lis檔(模擬產生出來的檔)裡的MOS就可以看到您要的C值了

yalon

您得隨手  查一下 manual .
3 b9 h  O* j: r  ]9 N
Cgd Cgs Cgb 可由 lx(19) lx(20) lx(21) 分別 print out.
2 Z3 x+ d( w: B9 {% @/ J' ?

' h$ @4 b% X$ ^6 G8 gFor your reference.

0918429587

CAB_BS    LX28
CAB_BD   LX29

其他我找不到
Cgd Cgs Cgb 可由 lx(19) lx(20) lx(21) 分別 print out
" L9 X6 [' @0 E/ \- c% z這是 CGDBO  CGSBO CBGBO

- e! f7 t1 z, L- S3 f+ j% E; K不一樣

chcheng

Refer to "HSPICE User's Manual: Elements and Device Models Vol.II"
3 z0 l# O, e" l0 X/ r' bAn example for your reference...

----------------------------------------------------------------
***** Gate Capacitance Plots *****
" N  \2 e' |0 S* @.lib 'your_component_model' lib_corner
; }( `. p* g/ i% h! i* D.temp operational_temp
.option dccap=1 post
m1 n_drain n_gate gnd n_bulk l=0.8u w=100u ad=200e-12 as=200e-12
vd n_drain gnd 0
1 }& y+ ]- C. yvg n_gate gnd 5
# n2 T$ P3 h) P, [vb n_bulk gnd 0
( c  O3 \9 j8 f.dc vd 0 5.0 0.1
.print   CGG=lx18(m1)
+        CGD=par('-lx19(m1)')
9 T$ ~( `) G) o- d" n( r, {7 E+        CGS=par('-lx20(m1)')
' O' a1 D- @& Y; I' f: v& T+        CDG=par('-lx32(m1)')
+        CSG=par('lx18(m1) + lx21(m1) + lx32(m1)')
+        CGB=par('lx18(m1) + lx19(m1) + lx20(m1)')
.ends

( g1 j: B- p9 w' l----------------------------------------------------------------
) x, T1 t' g% m% l. h( jSix capacitance are reported in the operating point printout
: a3 ~6 a8 {& z7 D" ?9 G5 E    cd_total = dQD/dVD
    cg_total = dQG/dVG
! l4 L& ?5 i$ x+ o    cs_total = dQS/dVS
    cb_total = dQB/dVB
    cgs = -dQG/dVS
& U% `% Q$ w4 R8 }. L    cgd = -dQG/dVD
% S0 r/ ]5 q# c/ s- Y& Z% c- Z, zThere capcitances include gate-drain, gate-source, and gate-bulk
8 `' [' B9 o( poverlap capacitance, and drain-bulk and source-bulk diode capacitance.
0 n9 _3 d8 ~/ F7 k' ~
CGG = dQg/dVG
2 o- G5 r, \+ H' N. vCGD = -dQg/dVD
: n* E9 q& G0 z  ?& i& }  KCDG = -dQD/dVG
. F2 p0 e2 z) J  G% L
, h7 }* Q2 k; f* `The MOS element template printouts for gate capacitance are LX18~LX23
and LX32~LX34.

LX18(m) = dQG/dVGB = CGGBO
& C& Q% x) q5 a1 U! x, ?- l) XLX19(m) = dQG/dVDB = CGDBO
( ?7 H. _/ ]2 F9 k% d* Q9 S0 mLX20(m) = dQG/dVSB = CGSBO

' `1 `9 |# D$ n0 S8 y4 e- PLX21(m) = dQB/dVGB = CGGBO
LX22(m) = dQB/dVDB = CGGBO
LX23(m) = dQB/dVSB = CGGBO
# Z' S( c" z* _/ ~0 O
* W# I, l0 O" cLX32(m) = dQD/dVG = CDGBO
, F* p' @5 C& X! KLX33(m) = dQD/dVD = CDDBO
LX34(m) = dQD/dVS = CDSBO
6 w! k6 T: m/ \9 `/ u
The equation shown above is for an NMOS with source-bulk grounded
) P0 @7 |. [, y$ K; X1 ?9 S" `. i% mconfiguration. Refer to the user's manual for more detail ^^