hspice 問題 有關mos內部電容指令

0918429587

mos內部電容要看Cgs Cgd Cdb Cbs
- n" q/ ], c- z3 {) y" h
要怎麼定義用
- O' h( d: x+ E" }7 ~4 z" Iplot LX??
5 b! j, t- S2 i
請各位幫忙一下

小朱仔

直接下.op及.probe
$ I% Q1 ?7 g: ~- R9 a; d8 B; Z找*.lis檔(模擬產生出來的檔)裡的MOS就可以看到您要的C值了

yalon

您得隨手  查一下 manual .

( O4 `! h6 }, d4 z; W5 _3 D' h( zCgd Cgs Cgb 可由 lx(19) lx(20) lx(21) 分別 print out.

; P8 }: f& y$ Z$ ?8 V" F% W
# w, s$ z! P& H3 n/ R  vFor your reference.

0918429587

CAB_BS    LX28
- F. t% o8 L% n$ ]2 C9 ZCAB_BD   LX29
+ j' `2 x+ ]; O" K1 `
其他我找不到
Cgd Cgs Cgb 可由 lx(19) lx(20) lx(21) 分別 print out
6 s# s! H; x/ ~3 W這是 CGDBO  CGSBO CBGBO
( o6 w' j( m/ ]5 j4 ~8 q
2 ~) Z+ Q" A/ N; c$ Q) [: O不一樣

chcheng

Refer to "HSPICE User's Manual: Elements and Device Models Vol.II"
An example for your reference...
  @. c4 P& A* l0 b' @  z; P2 I6 V4 j# W
8 f+ c+ B& U  ~$ r# m) P. P6 w----------------------------------------------------------------
***** Gate Capacitance Plots *****
1 [% ^9 Z9 q" v, l* L.lib 'your_component_model' lib_corner
$ I! t  W" V. f! [! e1 }* R) v: ~3 o.temp operational_temp
.option dccap=1 post
( _$ v8 i% o6 @: K, om1 n_drain n_gate gnd n_bulk l=0.8u w=100u ad=200e-12 as=200e-12
vd n_drain gnd 0
+ R6 n0 [! k8 Jvg n_gate gnd 5
vb n_bulk gnd 0
0 u* W; V( M9 o, g$ R6 g0 h+ i.dc vd 0 5.0 0.1
.print   CGG=lx18(m1)
" U5 {4 [1 t: C. G( u( _9 r+ F+        CGD=par('-lx19(m1)')
, I3 y' W0 t/ B7 ?) s+        CGS=par('-lx20(m1)')
+        CDG=par('-lx32(m1)')
( k0 P' Y" S) n( ~4 ~* i+        CSG=par('lx18(m1) + lx21(m1) + lx32(m1)')
% P$ f8 R! ~; G+ a+        CGB=par('lx18(m1) + lx19(m1) + lx20(m1)')
.ends
/ W* d$ ^$ a% W: E; p$ G/ D
----------------------------------------------------------------
6 ~3 G) D; v+ U2 x3 q3 ESix capacitance are reported in the operating point printout
    cd_total = dQD/dVD
; M3 h6 G1 S0 y4 R* K+ ?    cg_total = dQG/dVG
$ [% c9 A* |0 M; ^) v1 S0 ?    cs_total = dQS/dVS
$ X: K: Z2 r: b3 K% N' Y) Y    cb_total = dQB/dVB
" I6 ~8 t  K  |4 z: C! C    cgs = -dQG/dVS
1 L/ K9 F+ f! ?% H# P9 H. L0 R    cgd = -dQG/dVD
There capcitances include gate-drain, gate-source, and gate-bulk
5 d; D# [/ i9 o. ^overlap capacitance, and drain-bulk and source-bulk diode capacitance.
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0 r( O0 c7 x" I+ ?, r, X; RCGG = dQg/dVG
CGD = -dQg/dVD
5 r, A0 w7 g+ dCDG = -dQD/dVG
9 u5 e. n* X  ?. D: g
The MOS element template printouts for gate capacitance are LX18~LX23
9 c4 i) Z% E/ B5 u* dand LX32~LX34.
# X. |8 h" _6 w, O
8 [+ m+ {+ ~/ s$ ^LX18(m) = dQG/dVGB = CGGBO
LX19(m) = dQG/dVDB = CGDBO
& x% I6 H) l: ^5 R( m) ZLX20(m) = dQG/dVSB = CGSBO
7 ~6 e: _0 u/ }$ k; S' E
LX21(m) = dQB/dVGB = CGGBO
LX22(m) = dQB/dVDB = CGGBO
LX23(m) = dQB/dVSB = CGGBO

LX32(m) = dQD/dVG = CDGBO
LX33(m) = dQD/dVD = CDDBO
4 q0 ~' a! R' Q& k  b- k  i% iLX34(m) = dQD/dVS = CDSBO
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3 I7 q; `* P2 ]- ]- U+ \) G" zThe equation shown above is for an NMOS with source-bulk grounded
. I) U* x6 w1 a1 a% U  V' |& ~configuration. Refer to the user's manual for more detail ^^