hspice 問題 有關mos內部電容指令

0918429587

mos內部電容要看Cgs Cgd Cdb Cbs
% i, c( @" [* B1 o/ }
$ m8 o! u  o3 Y. A/ t/ p' ~5 A要怎麼定義用
8 @" ]; u  Y& t- ?3 H) B5 M' l9 vplot LX??

請各位幫忙一下

小朱仔

直接下.op及.probe
3 V  y( l: |7 A. `9 T# i2 ]2 a找*.lis檔(模擬產生出來的檔)裡的MOS就可以看到您要的C值了

yalon

您得隨手  查一下 manual .

$ R7 {6 Z* ]: Q7 v" L) Q/ p9 ?$ ZCgd Cgs Cgb 可由 lx(19) lx(20) lx(21) 分別 print out.
1 d* A8 b9 M9 S3 A  [% [3 B
; e' X! f3 R$ J9 q4 b4 L9 ]6 B8 i
For your reference.

0918429587

CAB_BS    LX28
CAB_BD   LX29

其他我找不到
Cgd Cgs Cgb 可由 lx(19) lx(20) lx(21) 分別 print out
" a8 P$ d7 M6 j6 W這是 CGDBO  CGSBO CBGBO

) L3 R3 }+ `6 m" \不一樣

chcheng

Refer to "HSPICE User's Manual: Elements and Device Models Vol.II"
An example for your reference...
' b: V' [9 U6 m6 {- F
----------------------------------------------------------------
***** Gate Capacitance Plots *****
.lib 'your_component_model' lib_corner
$ z; O9 Y% T+ c$ X6 Z; }.temp operational_temp
2 w* ^! k) ^- i.option dccap=1 post
m1 n_drain n_gate gnd n_bulk l=0.8u w=100u ad=200e-12 as=200e-12
vd n_drain gnd 0
vg n_gate gnd 5
vb n_bulk gnd 0
5 S. R; X3 @* R# t9 I3 A.dc vd 0 5.0 0.1
: @8 ~5 T% g# _/ u) |$ a7 u.print   CGG=lx18(m1)
+        CGD=par('-lx19(m1)')
+        CGS=par('-lx20(m1)')
7 S! D( m: q5 S* v* y3 d  t+        CDG=par('-lx32(m1)')
+        CSG=par('lx18(m1) + lx21(m1) + lx32(m1)')
+        CGB=par('lx18(m1) + lx19(m1) + lx20(m1)')
.ends

----------------------------------------------------------------
. z+ {* i+ C# X6 w* g5 R0 L2 JSix capacitance are reported in the operating point printout
    cd_total = dQD/dVD
" X$ P: T  y2 f# Z    cg_total = dQG/dVG
    cs_total = dQS/dVS
$ Q; L0 d+ t$ C) J1 E    cb_total = dQB/dVB
: g' A+ d# x# E. Z    cgs = -dQG/dVS
    cgd = -dQG/dVD
. n% ^2 n  `$ d+ z* C  `* C+ A1 RThere capcitances include gate-drain, gate-source, and gate-bulk
, C- l( ?$ ?0 @+ J$ Y* U5 t" F) zoverlap capacitance, and drain-bulk and source-bulk diode capacitance.

CGG = dQg/dVG
CGD = -dQg/dVD
" Y5 S" n6 L# s9 aCDG = -dQD/dVG

0 Q9 I+ _7 `9 d, ]0 UThe MOS element template printouts for gate capacitance are LX18~LX23
and LX32~LX34.
( l  f, P5 e0 n) R7 L
LX18(m) = dQG/dVGB = CGGBO
  W% \! x( B- p9 y' i9 z: u0 N3 c! oLX19(m) = dQG/dVDB = CGDBO
LX20(m) = dQG/dVSB = CGSBO

LX21(m) = dQB/dVGB = CGGBO
LX22(m) = dQB/dVDB = CGGBO
  b5 ?" O; n! ]% O4 f/ t! ~+ lLX23(m) = dQB/dVSB = CGGBO

! R) Z# [4 O: Y5 o/ aLX32(m) = dQD/dVG = CDGBO
' [3 ]( t- w/ K, H* d+ wLX33(m) = dQD/dVD = CDDBO
LX34(m) = dQD/dVS = CDSBO
3 u9 K" e! M& Z5 M- y6 `
The equation shown above is for an NMOS with source-bulk grounded
configuration. Refer to the user's manual for more detail ^^