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Circuit and Layout Co-Design for ESD Protection in Bipolar-CMOS-DMOS (BCD) High-Voltage Process
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Wen-Yi Chen, Student Member, IEEE, and Ming-Dou Ker, Fellow, IEEE; C+ } J& d. E" K5 D& Q0 M: f
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Abstract—The n-channel lateral double-diffused metal–oxide–
3 H0 I N- m2 A# u+ F9 ~! ?+ n. bsemiconductor (nLDMOS) devices in high-voltage (HV) technologies
- I0 G i+ a( ]6 L- Gare known to have poor electrostatic discharge (ESD)
% D j% f% X7 j4 g( d. l; X& ]robustness. To improve the ESD robustness of nLDMOS, a co-design( c. {& Y7 |3 j
method combining a new waffle layout structure and a trigger7 W# m- a7 ]0 Y& l1 j8 g) P, D% L" y
circuit is proposed to fulfill the body current injection technique6 Y! K5 S, K1 U* B. ~8 A6 b
in this work. The proposed layout and circuit co-design method" n, [0 |9 l( P( d! R. Y
on HV nLDMOS has successfully been verified in a 0.5- m 16-V0 E5 E- k' Q0 n4 }8 k$ E I! H
bipolar-CMOS-DMOS (BCD) process and a 0.35- m 24-V BCD# W2 x/ S3 Z0 x% `: I% d- @
process without using additional process modification. Experimental P& v. r' b( n$ p3 g
results through transmission line pulse measurement$ w3 Q6 [ M* b1 [* @3 N# S
and failure analyses have shown that the proposed body current
4 X1 e; ` h! m) P7 z0 S7 |injection technique can significantly improve the ESD robustness
+ {$ {+ u7 V- U9 ]( G" J* Uof HV nLDMOS." K% b8 |1 |; A: q9 Z& W
" ?! I# s, x9 O* _# GIndex Terms—Bipolar-CMOS-DMOS (BCD) process, body
9 U1 a6 ]; F' u5 E7 c- C4 Ccurrent injection, electrostatic discharge (ESD), lateral double-diffused
. s0 ]: ?- L1 qmetal–oxide–semiconductor (LDMOS). |
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