An ESD-Protected 5-GHz Differential Low-Noise

yuyingdugu

A novel ESD protection design for radio-frequency (RF)
differential input/output (I/O) pads is proposed and successfully
applied to a 5-GHz differential low-noise amplifier (LNA) in a
% T, z; g, d+ B, Y7 d! R9 ?, E130-nm CMOS process. In the proposed ESD protection design,
an ESD bus and a local ESD clamp device are added between the
2 |* }2 I" k' j; Cdifferential input pads to quickly bypass ESD current, especially
" Q) Y, Y+ c% M' G( |, {, funder the pin-to-pin ESD-stress condition. With 10.3-mW power
consumption under 1.2-V power supply, the differential LNA
5 e6 X  z5 Q: R7 {7 B3 L) `with the proposed ESD protection design has the human-bodymodel
3 u! v1 |" M+ R0 q( a(HBM) ESD robustness of 3 kV, and exhibits 18-dB power
gain and 2.62-dB noise figure at 5 GHz. Experimental results
have demonstrated that the proposed ESD protection circuit can
be co-designed with the input matching network of LNA to
simultaneously achieve excellent RF performance and high ESD robustness.

- I' Y! Y: }" d1 X9 v# z0 l

遊客，如果您要查看本帖隱藏內容請回復