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A novel ESD protection design for radio-frequency (RF)
5 k( W6 p8 u3 K; Hdifferential input/output (I/O) pads is proposed and successfully
+ L- w( c0 z& u" ^" k" u( j& n% Kapplied to a 5-GHz differential low-noise amplifier (LNA) in a
4 Y. d* w, U9 i/ z# O; Y130-nm CMOS process. In the proposed ESD protection design,. G. Q- I" P0 i% l- D
an ESD bus and a local ESD clamp device are added between the4 m1 `: ^ W0 [0 t& f
differential input pads to quickly bypass ESD current, especially0 ?# }, t+ p) Y6 F) u
under the pin-to-pin ESD-stress condition. With 10.3-mW power
+ B3 ^5 I+ f0 a% ~; mconsumption under 1.2-V power supply, the differential LNA
, C, f9 c) P u L2 f1 o9 Y; jwith the proposed ESD protection design has the human-bodymodel& {! S9 c) q5 v9 c; G$ B% N
(HBM) ESD robustness of 3 kV, and exhibits 18-dB power1 G/ F. ~; T; t; i
gain and 2.62-dB noise figure at 5 GHz. Experimental results. B8 m0 `2 p0 ^! J4 }* x
have demonstrated that the proposed ESD protection circuit can
, z( `9 E. W" `, ebe co-designed with the input matching network of LNA to
: ]2 Z, \1 F0 e% M- ^simultaneously achieve excellent RF performance and high ESD robustness. v4 A. M2 S( @+ z, p. D7 H
- M# a# I3 S6 h+ e! t7 f. x
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