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A novel ESD protection design for radio-frequency (RF)/ z& `# M* X$ i4 I( i, R$ j
differential input/output (I/O) pads is proposed and successfully
1 ^. I- e4 m4 O+ P! Eapplied to a 5-GHz differential low-noise amplifier (LNA) in a
; n3 i1 O3 h) Z130-nm CMOS process. In the proposed ESD protection design,
( G% ^/ A8 k) qan ESD bus and a local ESD clamp device are added between the
- C- V# K. |% T6 M L; Z& u adifferential input pads to quickly bypass ESD current, especially
1 K, s8 A, D* munder the pin-to-pin ESD-stress condition. With 10.3-mW power: f8 i2 P) P0 T# L+ S% \
consumption under 1.2-V power supply, the differential LNA6 f* C. [# l* e! m- g/ o2 g
with the proposed ESD protection design has the human-bodymodel
3 x; G+ d5 p( w% y/ x(HBM) ESD robustness of 3 kV, and exhibits 18-dB power
u+ x, L* B: i: {* Pgain and 2.62-dB noise figure at 5 GHz. Experimental results6 k% T( ^4 S) |! X
have demonstrated that the proposed ESD protection circuit can
, ^8 S& p2 a4 h$ S0 c, d5 xbe co-designed with the input matching network of LNA to
0 }" H3 \; P# f7 J; ?$ gsimultaneously achieve excellent RF performance and high ESD robustness.) D% B3 z8 A6 z9 |, X; e- j' Z
/ |( f' d* h4 j4 g. Y8 m( _ |
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