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A novel ESD protection design for radio-frequency (RF)" x5 O, `! k6 v1 N% F
differential input/output (I/O) pads is proposed and successfully
: t. [% _ c L0 w& X, x, Kapplied to a 5-GHz differential low-noise amplifier (LNA) in a
+ b2 K7 I7 X8 o: B2 l7 N6 k130-nm CMOS process. In the proposed ESD protection design,3 H8 e- Y) @: T: v
an ESD bus and a local ESD clamp device are added between the
3 v; E6 \; E- h2 ?! P' ]$ bdifferential input pads to quickly bypass ESD current, especially
1 t H( @0 h& M7 J" o2 vunder the pin-to-pin ESD-stress condition. With 10.3-mW power [/ Q! |6 B- d' `
consumption under 1.2-V power supply, the differential LNA' U8 X+ U+ i0 j( h& L
with the proposed ESD protection design has the human-bodymodel, U! d; I6 Q7 N( Z
(HBM) ESD robustness of 3 kV, and exhibits 18-dB power
( X7 z$ T& p# Q% r. n9 Egain and 2.62-dB noise figure at 5 GHz. Experimental results
. t& [' X$ H6 `& h5 D8 _have demonstrated that the proposed ESD protection circuit can
) G' Q. n; c4 `% ube co-designed with the input matching network of LNA to0 J; c4 H1 q$ w+ o) i' Z7 i
simultaneously achieve excellent RF performance and high ESD robustness.4 w- Q L% d+ R M: o# y% I4 U
6 s2 b0 z* q4 i5 g+ \% k: q
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