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A novel ESD protection design for radio-frequency (RF)
. G4 T3 v' {& q( C! ldifferential input/output (I/O) pads is proposed and successfully
6 J8 q* O) U5 {8 g7 p. Rapplied to a 5-GHz differential low-noise amplifier (LNA) in a
' v3 j9 H" v+ p- ~( o4 y$ u: R130-nm CMOS process. In the proposed ESD protection design,
5 C k8 w0 Y0 h1 p0 x/ nan ESD bus and a local ESD clamp device are added between the
. h2 F. M8 A; B% @+ ^- Idifferential input pads to quickly bypass ESD current, especially
7 @6 M4 B6 ]# s# p yunder the pin-to-pin ESD-stress condition. With 10.3-mW power" C& _' l8 g1 C4 Q" S# \. B
consumption under 1.2-V power supply, the differential LNA
, v9 {6 U# G* P" [( iwith the proposed ESD protection design has the human-bodymodel
$ _ \2 w) P4 h5 N5 T) }(HBM) ESD robustness of 3 kV, and exhibits 18-dB power+ l% u! O# U- f% h. J5 c
gain and 2.62-dB noise figure at 5 GHz. Experimental results7 Q% a& S, k- s9 T$ O+ c! F
have demonstrated that the proposed ESD protection circuit can) Q: F/ ~5 y O) l& O0 b
be co-designed with the input matching network of LNA to+ o: d. U: m$ }( Y0 \$ U! ^
simultaneously achieve excellent RF performance and high ESD robustness.3 G* l' Z: d7 j* A9 r4 C, y
; o+ S6 D/ N% k
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