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A novel ESD protection design for radio-frequency (RF)
* R- J# a+ y9 Q* u" rdifferential input/output (I/O) pads is proposed and successfully
: F/ ~0 }+ a: e7 u2 ~/ E6 t3 C8 Aapplied to a 5-GHz differential low-noise amplifier (LNA) in a
! k! E* Z& Y( B* X2 V: ^130-nm CMOS process. In the proposed ESD protection design,% G6 {. ?% P( E$ Y
an ESD bus and a local ESD clamp device are added between the
* P' d1 g+ H+ \& D8 mdifferential input pads to quickly bypass ESD current, especially1 J7 j* i: l7 D+ }& X
under the pin-to-pin ESD-stress condition. With 10.3-mW power0 S. L0 t$ Z8 b; b9 Z' O
consumption under 1.2-V power supply, the differential LNA
9 d _, k# }5 H$ k& _with the proposed ESD protection design has the human-bodymodel+ W; y. M- d. }" a9 D
(HBM) ESD robustness of 3 kV, and exhibits 18-dB power
7 U5 O: X/ C+ ^- V8 Ugain and 2.62-dB noise figure at 5 GHz. Experimental results
d; ]$ @8 ]( {have demonstrated that the proposed ESD protection circuit can
3 A- m8 Y# G4 ~9 H9 `3 qbe co-designed with the input matching network of LNA to
. Z- h! ]8 i+ x! Tsimultaneously achieve excellent RF performance and high ESD robustness.( `- ^5 `9 ^! a$ ]( J" _
7 W+ L# R4 }3 E _
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