|
A novel ESD protection design for radio-frequency (RF)/ S* X8 A+ T% G; A
differential input/output (I/O) pads is proposed and successfully
% T, F! y2 U2 h3 I _) \( sapplied to a 5-GHz differential low-noise amplifier (LNA) in a/ H4 `7 b5 ?8 ]8 h) U, d
130-nm CMOS process. In the proposed ESD protection design,
, Q1 z: o' O, O" `an ESD bus and a local ESD clamp device are added between the
( q+ d8 {+ E" v4 D$ [differential input pads to quickly bypass ESD current, especially
% R9 E- h1 h4 ^8 q: ^9 ^2 Hunder the pin-to-pin ESD-stress condition. With 10.3-mW power5 [( ?4 C& Q" ^1 |
consumption under 1.2-V power supply, the differential LNA& j8 F7 ^3 O" ?5 I
with the proposed ESD protection design has the human-bodymodel
, L* X' E* B- c) F0 V(HBM) ESD robustness of 3 kV, and exhibits 18-dB power& C; |* A B- I) Z
gain and 2.62-dB noise figure at 5 GHz. Experimental results
K; C. ^& D \have demonstrated that the proposed ESD protection circuit can
. w4 Q Y" b' W6 v1 V! ?7 m6 e: ]be co-designed with the input matching network of LNA to
: [: {. G8 z- \3 g; tsimultaneously achieve excellent RF performance and high ESD robustness.
3 N& q/ P; N# B1 r& ?! y4 ]0 W. A+ G: ?; @, V; y) f9 I
|
本帖子中包含更多資源
您需要 登錄 才可以下載或查看,沒有帳號?申請會員
x
|