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For ESD test (HBM)
4 E' R5 ?/ W9 o3 Y( H' M8 mThe following are the test combination:
2 d0 j5 k8 u, p; ?, N) W2 M) r6 ~- e# O1. Power to Power1 A( M( d% r+ |$ l
2. Power to Ground
8 t* L6 M* Q0 z# a8 X4 L3. IO to Power+ ] N# x1 J8 p7 v5 C
4. Io to Ground
: S7 A1 _$ l; `: _7 A9 M) \5. IO to IO
- J, _( r6 g: J( ]+ E(different power domain need to be treated as different power. For ground usually you can treat as one group_silicon use substrate as common ground. But if you measure two different ground pin/ball > 2ohms. It should be seperated as 2 grond.)
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% F: I6 D; V. H2 B$ Q9 u6 q+ vthe total zap time fomula will be~ 2(+/- polarity) X (IO#X(P#+G#)+IO#+P#X(P#-1)X(P#-2)X...X1+P#XG)1 j( S' A6 E1 b) D; ?; b A- ~
For example: You have IO1/IO2/IO3/P1/P2/G1
8 ^5 I; c+ h) D, V* ^' j7 p0 v2 E2x((3X(2+1)+3+2X1+2X1)=25(multiple the zap interval)1 F* ^+ n- Y6 a7 d3 w1 _* y- D* U
So for high pin count it will take a lot of time. But it won't take more than a week(for one chip). 7 ~, G! v5 _( C8 K+ v, A, N# @# t
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For your reference. |
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