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Silicided poly...silicon targe poly
* D7 ]! p; G+ r9 K+ z3 zunsilicided poly...unsilicon targe Poly; }7 z, b) Y- ?/ A9 ~/ v. [
, }. m/ y+ D6 t/ F9 O* [- t& I
tc1 First-order temperature coefficient. (Default: resistor model parameter tc1r; 0 if no model is specified.)
' {; T2 e7 o' Wtc2 Second-order temperature coefficient. (Default: resistor model parameter tc2r; 0 if no model is specified.)
5 }) _ f, W2 q. r8 L. [) r3 _vc1 voltage across the first capacitor3 b0 z; }8 z9 Z! N
vc2 voltage across the second capacitor
7 L8 o1 f2 a0 n' w/ Y" j
1 t( r7 y- M5 f0 v0 l6 H( @# X+ }# KA two-terminal resistor., e' e1 {' x1 V) G T- _7 z+ J/ V
The resistance R is influenced by the temperature as follows:
( h2 E3 f+ z" J: ?R = N (1 + AT + BT2)
. r! u" z- ~1 B9 IT = Ta – Tn) Q g- P P" x1 W- b6 A1 C2 J
where N, A, B are device parameters described below; Ta (the “ambient” temperature) is set by the2 w9 @! M. V& C
.temp command; and Tn (the “nominal” temperature)
4 R( \( d) ~3 i5 {, \% H5 G0 \3 J9 ?2 K3 Z! ^$ Y7 |& l
3 C; `. j s. c; _( S
This produces a resistor of resistance 30 kilohms at the nominal temperature tnom. If the temperature T
. ]0 t' `0 w8 P/ v" J0 iis different from tnom, the resistance is 30,000*(1+0.01*(T-tnom)+0.0001*(T-tnom)*(T-tnom)). For
3 z4 N5 Z3 ^+ G' \example, if the circuit temperature is 127 degrees and tnom is 27 degrees, the resistance is
: ^$ ]- h4 j$ }8 E$ d( e8 r30,000*(1+0.01*100+0.0001*100*100) = 90,000 Ohms.
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6 |6 c8 m7 r' B9 v4 r" y2 W9 s6 h[ 本帖最後由 m851055 於 2007-7-30 08:50 PM 編輯 ] |
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發表於 2007-7-30 20:33:21
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