|
An ESD-Protected 5-GHz Differential Low-Noise Amplifier in a 130-nm CMOS Process! w2 h" Y: y: z
/ f$ Z) m( h9 s7 h+ E
Abstract- A novel ESD protection design for radio-frequency (RF) differential input/output (I/O) pads is proposed and successfully
% A# `4 W3 x) f5 ^applied to a 5-GHz differential low-noise amplifier (LNA) in a 130-nm CMOS process. In the proposed ESD protection design,6 N1 n2 ^) d7 W0 h9 \; X/ M+ {
an ESD bus and a local ESD clamp device are added between the differential input pads to quickly bypass ESD current, especially. G, d7 |* S4 ]
under the pin-to-pin ESD-stress condition. With 10.3-mW power consumption under 1.2-V power supply, the differential LNA* m6 f9 p! s9 K( ~6 P# N9 b V
with the proposed ESD protection design has the human-bodymodel (HBM) ESD robustness of 3 kV, and exhibits 18-dB power gain and 2.62-dB noise figure at 5 GHz. Experimental results have demonstrated that the proposed ESD protection circuit can be co-designed with the input matching network of LNA to simultaneously achieve excellent RF performance and high ESD robustness.- Q( S2 |3 o. k* ]5 F. |
$ u- ~( c7 |: D6 D0 u5 q. Z
|
本帖子中包含更多資源
您需要 登錄 才可以下載或查看,沒有帳號?申請會員
x
|