|
2#
樓主 |
發表於 2010-6-25 08:50:33
|
只看該作者
Abstract -- The diode operated in forward-biased condition has
7 n$ T9 w9 `6 X) n3 U8 w! ~been widely used as an effective on-chip ESD protection device at
/ A' m% b) @- n( CGHz RF and high-speed I/O pads due to the small parasitic) B7 _0 @4 ^0 c* R* y) s1 q; w! o1 e
loading effect and high ESD robustness in CMOS integrated8 E! H V0 G; n8 r( M k
circuits (ICs). This work presents new ESD protection diodes* n% M' p" a, |$ P( }' f
realized in the octagon, waffle-hollow, and octagon-hollow layout
0 n. ]- Z7 M8 K# z. u* w; Istyles to improve the efficiency of ESD current distribution and( n% j, v) ^: [* ~
to reduce the parasitic capacitance. The new ESD protection9 n' D) c5 z/ l7 ?; e
diodes can achieve smaller parasitic capacitance under the same8 L1 w9 }6 s- T* [
ESD robustness level as compared to the waffle diode. Therefore,
4 N4 v0 m9 h7 j7 K$ G/ v9 \" ^the signal degradation of GHz RF and high-speed transmission- x# a2 Y& V5 ^& B% i' M/ m
can be reduced due to smaller parasitic capacitance from the new
* }8 I+ D3 Y+ A1 wproposed diodes. |
|