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發表於 2010-6-25 08:50:33
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Abstract -- The diode operated in forward-biased condition has0 W7 c& a) U& E, y
been widely used as an effective on-chip ESD protection device at
8 j* O) f6 q/ m- ~! gGHz RF and high-speed I/O pads due to the small parasitic B# G }& _- U8 S. F
loading effect and high ESD robustness in CMOS integrated* y# D ?* k+ R% E
circuits (ICs). This work presents new ESD protection diodes- H9 O/ z( `/ e" ?6 T* M
realized in the octagon, waffle-hollow, and octagon-hollow layout( {( ?; I/ l2 G* D% w
styles to improve the efficiency of ESD current distribution and# A8 w% D1 i! ^& U" U6 O$ o
to reduce the parasitic capacitance. The new ESD protection
) Q& X7 \- L; _! p$ Z7 ?diodes can achieve smaller parasitic capacitance under the same
1 ^8 A# Z! [2 N" q8 VESD robustness level as compared to the waffle diode. Therefore,
; E' H' ]" m7 Tthe signal degradation of GHz RF and high-speed transmission
5 T- k+ I" d/ ~( _3 l. pcan be reduced due to smaller parasitic capacitance from the new9 p2 ^& @% {9 }" ?: ]* P3 s) c* H. \
proposed diodes. |
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