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發表於 2010-6-25 08:50:33
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Abstract -- The diode operated in forward-biased condition has0 c* I* H; b+ Q, x7 b
been widely used as an effective on-chip ESD protection device at) ]; G) d5 a4 L8 e; d2 a
GHz RF and high-speed I/O pads due to the small parasitic- a9 Q7 p- C# F5 Z5 R; Z) n9 Q) X# D
loading effect and high ESD robustness in CMOS integrated, @- X0 }- O6 N" F8 n% H7 Z+ u; H
circuits (ICs). This work presents new ESD protection diodes
3 h5 O$ i% d! i+ l$ z, Jrealized in the octagon, waffle-hollow, and octagon-hollow layout
8 Q8 H! _% T; |1 k [. @- G* ]# jstyles to improve the efficiency of ESD current distribution and6 r" E- ~3 g" a/ l- ]" h* C: o
to reduce the parasitic capacitance. The new ESD protection+ x5 G1 | D; n6 a
diodes can achieve smaller parasitic capacitance under the same' D4 @. ]. B, t: ^+ K9 H
ESD robustness level as compared to the waffle diode. Therefore,
( a" Y: w; S5 wthe signal degradation of GHz RF and high-speed transmission5 B- {3 S4 F Q- U' U" B$ o
can be reduced due to smaller parasitic capacitance from the new
7 ^. v6 F" v7 T7 f6 Lproposed diodes. |
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