|
2#
樓主 |
發表於 2010-6-25 08:50:33
|
只看該作者
Abstract -- The diode operated in forward-biased condition has" ?# E$ r ^6 ?
been widely used as an effective on-chip ESD protection device at
0 ^ o5 J" Y4 m2 i9 W( m7 HGHz RF and high-speed I/O pads due to the small parasitic+ }$ J# @% B, a! s% b: b( L
loading effect and high ESD robustness in CMOS integrated
& q8 z. N, H+ y) w$ xcircuits (ICs). This work presents new ESD protection diodes
/ _! S' L) \ t7 F/ nrealized in the octagon, waffle-hollow, and octagon-hollow layout
6 @& m! G) M1 ?6 dstyles to improve the efficiency of ESD current distribution and8 \1 E! I( F9 Z
to reduce the parasitic capacitance. The new ESD protection& ], N2 M- J7 o% Y8 t
diodes can achieve smaller parasitic capacitance under the same4 S1 f% v9 i5 z. G& t
ESD robustness level as compared to the waffle diode. Therefore,
3 z. Q( j$ n4 n" b% Mthe signal degradation of GHz RF and high-speed transmission
: R- ]& C3 X3 [6 @# Rcan be reduced due to smaller parasitic capacitance from the new% ^8 }0 `$ E7 j# F, Z, ?; `& Y
proposed diodes. |
|