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Abstract
5 f2 i1 @5 r3 Q3 L; M: a# U/ i1 Y0 o$ lThe paper deals with Hall and flux-gate magnetic field sensors consisting of integrated combination of CMOS ASICs and planar ferromagnetic
7 Z- ^4 r7 x6 H" ~: {components. Ferromagnetic parts are made of a soft amorphous alloy, integrated at the CMOS wafer in a post-processing production phase.
* E g; G7 z! ^9 i& a# gWhen the sensors are exposed to an in-plane magnetic field, under the peripheries of ferromagnetic parts appears a strong magnetic induction; T% U% I' g% }
perpendicular to the wafer surface. This perpendicular field is sensed either by Hall plates or planar coils. In the case of Hall magnetic sensors,
G k. w/ ~' b* a: Hsuch ferromagnetic parts give a magnetic gain of 2–10. Compared to conventional integrated Hall magnetic sensors, the new sensors have up to
# m# j' E+ y, u3 r7 x9 A) O10 times higher magnetic resolution and they respond to a magnetic field parallel with the surface of the chip. They are used as current sensors or( t* S: B1 e( ]7 s# n) K
angular position sensors. In the case of flux-gate sensors, both the saturation-forcing coil and the pick-up coils are realized as planar coils, using
, u9 g/ T4 H- T8 N; Qmetallization layers that exist in the CMOS process. The integrated flux-gate technology is illustrated by a low-power two-axis magnetic field
" r$ E; m4 f3 _1 Nsensor suitable for a portable electronic compass.
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. a5 V7 p3 x: b網路上抓的 paper, 希望對大家有幫助!!1 A3 ~, `) M( U1 U: L
權限10 & RDB=3: |( J1 F% c9 I2 L$ V- p
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