NLDD is a N-type lightly doped drain (implant layer) for E-field reduction @drain or source site especially for general submicro process. : I4 q8 W8 a0 o; t$ n6 wNDD is a N-type double diffusion drain (implant layer for current technology) for E-field reduction @drain or source site (depend on asymmetric or symmetric device structure) especially for high voltage process. No special layout concern, just follow DRM.