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發表於 2010-6-25 08:50:33
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Abstract -- The diode operated in forward-biased condition has
9 P/ ]7 V# l* N7 ^( |# U) z' xbeen widely used as an effective on-chip ESD protection device at5 Y$ l7 ~5 `2 E3 M3 a
GHz RF and high-speed I/O pads due to the small parasitic
9 |6 P9 ~0 h9 Y: @loading effect and high ESD robustness in CMOS integrated
' K2 w/ }- j; ~/ ~ U- ucircuits (ICs). This work presents new ESD protection diodes1 _ X" f" s: a2 n' A' L2 w( K
realized in the octagon, waffle-hollow, and octagon-hollow layout
7 c" B. J+ H& ^0 Pstyles to improve the efficiency of ESD current distribution and
) h* z# v" ^3 T: u7 Eto reduce the parasitic capacitance. The new ESD protection
: s: ^1 i, z; c8 u) n! ]; e9 Cdiodes can achieve smaller parasitic capacitance under the same
+ X0 s4 A' O! g D: BESD robustness level as compared to the waffle diode. Therefore,
5 |4 {' n9 i9 n! D( m5 Ythe signal degradation of GHz RF and high-speed transmission' [$ q7 V+ h8 h
can be reduced due to smaller parasitic capacitance from the new
# W) W, G# ~1 W2 Fproposed diodes. |
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