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First Fully CMOS-Integrated 3D Hall Probe[EPFL/2005]

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發表於 2007-6-11 22:34:42 | 只看該作者 回帖獎勵 |倒序瀏覽 |閱讀模式
網路上抓的 paper, 希望對大家有幫助!!
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ABSTRACT
" L' d+ w9 |2 V9 ~# A$ y" lIn this paper, we present a new planar fluxgate: b) ?5 H% D  T
magnetometer structure. The sensor has the6 j* }" n% R- O- g
orthogonal fluxgate configuration which makes the2 ~% V# x0 Q, d: I
detection part independent of the excitation$ x  J  }5 ?# E: t
mechanism. The sensor consists of a ferromagnetic
: ]  h" t6 p9 P, ]7 }! }2 _cylindrical core covering an excitation rod, and( ~& P1 z2 n1 |' r* v* _
planar coils for signal detection. The fabricated4 C3 |! Z% K2 B: s
sensor has a linear range of ±250 μT, a sensitivity2 j! Y2 i" U5 q$ @- u
of 4.3 mV/mT, and a perming below 400 nT for
, l  J, [, W' K) T1 j* k200 mA peak sinusoidal excitation current at
* H' {; g. M5 v/ q2 ~; V/ D8 z& }$ {6 B100 kHz. The effect of demagnetization on the" [5 j9 A0 G- w2 [# Y, l6 U
sensitivity, linear range, and perming for this6 Y7 o; t' P, w
structure is demonstrated by varying the length of2 {* D: s9 _  {7 _: M5 \) s+ O
the ferromagnetic core.) y" g. g) A/ j3 p' l9 Q: N9 P* |: {. g) n
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6 l% p+ y, R7 CABSTRACT
3 j2 q" l2 S7 J, l6 G5 |8 P* uIn this paper we report on a 32x32 optical imager3 u1 Q; z: e% ~* R
based on single photon avalanche diodes integrated in
& i' J5 j% E" XCMOS technology. The maximum measured dynamic1 Q2 t& [1 {( l* ?
range is 120dB and the minimum noise equivalent3 {; N* Y$ F* G& E! L' `
intensity is 1.3x10-3lx. The minimum integration time
0 |' i1 Q% A6 rper pixel is 4􀁐s. The output of each pixel is digital,
" z9 F# y2 g2 r1 Rthereby requiring no complex read-out circuitry, no0 S7 y+ i. j/ w; G: u
amplification, no sample & hold, and no ADC.# Q% M4 d) z( o; N

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ABSTRACT
" v$ b6 T% u* G7 t7 RWe present the first fully CMOS-integrated 3D
' G6 ?& m( q) X' c9 }( _: vHall probe. The microsystem is developed for precise
+ g  k/ e6 T7 t+ P# cmagnetic field measurements in the range from
+ d* @$ S: X+ a: b4 ~militeslas up to tens of tesla in the frequency range
3 O* @9 {8 u* x8 ?) Afrom DC to 30 kHz and a spatial resolution of about/ k, T4 _+ ?$ j+ @; [
150 μm. Microsystem is realized in a conventional
+ ~' U6 @  b7 p3 DCMOS process without any additional processing step
2 ^. L5 }0 \$ G  l( nand can be manufactured at very low cost. With the
, Z0 ?- B: i% B7 A4 _( n; [: Delectronics circuit applying the so-called spinningcurrent
2 j; p$ O4 }, Z8 U, r/ ntechnique to the Hall sensor block, we obtain
/ V- h. G4 Z" f$ A2 L2 Alow noise (a resolution better than 100 μT) and low+ B6 J  f9 i1 u# n0 X% ~2 u
cross talk between the channels (less than 0.2%
  C. |+ U. X# z% e% @between the channels up to 2 T). The single chip
8 T) g# l8 O2 h/ f1 z, oconfiguration insures a precision of the orthogonality
+ j+ M: @% ^  M. x; C* tbetween the measurement axes better than 0.5°. A6 f3 z- p  m# n% O
temperature sensor based on band-gap cell is integrated' I% G: F6 A/ t/ S3 I
directly on the chip, which allows a good temperature
& j  N7 C. @9 [/ t: ]) mdrift compensation of the system.
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  G7 J* f4 p8 h+ ]Magnetic sensors having submicrometer spatial resolution/ d4 o" r& w2 G
are key elements in several fundamental studies as well9 q" I! h9 v5 `% D  p  ~* C( d
as industrial applications.1–4 Hall effect devices are emerging9 ?# L; g9 @& n! K* @) |9 K$ y
as one of the most suitable solutions.4–9 The ordinary Hall
' H7 ~$ i8 B, O8 @# A  m4 peffect is due to the Lorentz force acting on charge carriers in- P* o+ M# C; s" `! Y! d9 w/ O, Y
metals, semi-metals, and semiconductors.5 Magnetic materials# ^6 A: P6 W' d# `& Q2 x
show additional “Hall phenomena” which are, generally
  y/ {3 Y4 L0 wspeaking, generated by spin–orbit interactions: the so-called
! [5 o6 u' c7 [8 ~" d& P2 oextraordinary10–16 and planar Hall effects.17–
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We developed a LODESR spectrometer based on a miniaturized Hall sensor and a5 h+ _/ I" o9 V# w
resonant cavity tuned at 14 GHz. We used InSb cross-shaped Hall devices (designed and
3 U( x7 b$ Y9 ~. G0 |fabricated in collaboration with Asahi Corporation) with active areas down to (7 μm)2. The
' M0 N6 y+ `3 z4 K! b1 zHall sensor is inserted in the cavity within a hole.
* }  Q; C3 }! p1 r$ i6 O1 sCoupling between the microwave power (guided wave) and the cavity is achieved by using2 F1 P+ d! p7 S8 g1 _4 y) q5 X- [
an iris.We adjusted the iris diameter and the cavity dimension such that the resonant
% w0 f. w" a: b! Q' jfrequency is about 14 GHz. Our final design has a 4.36 mm diameter aperture. The Hall# W# ]; V! `1 G& y, P3 M
device does not significantly change the Q-factor and the resonance frequency of the cavity.
' V: {3 v+ Q8 B2 e4 j/ @" J0 @7 KThe quality factor Q of the cavity is about 104.  w" G: j3 A2 Q3 e+ E
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, G3 Q) A0 |% ^7 G% L0 U- fAbstract—In this paper, we present a low-power, two-axis fluxgate3 F6 G$ b7 h$ ]! I1 p
magnetometer. The planar sensor is integrated in a standard/ ~# j* b0 l$ L9 `9 e
CMOS process, which provides metal layers for the coils and
, \5 f9 C. {4 A' `electronics for the signal extraction and processing. The ferromagnetic6 P4 _$ ~- U7 X
core is placed diagonally above the four excitation coils# u% a+ Q* C" c- h  \7 @0 A; t
by a compatible photolithographic post process, performed on
8 p3 x. o2 V$ Y+ L. j( ^2 ^) Qa whole wafer. The sensor works using the single-core principle,
. i4 H- V& _8 ^: Jwith a modulation technique to lower the noise and the offset
8 h# ]/ K# V$ R1 K% ^" o- wat the output. In contrast to traditional fluxgate approaches, the7 I, b8 \8 D! x6 @0 {' y3 @  Q0 v$ H
sensor features a high degree of integration and minimal power
" ^* _9 v, i& z- T  Econsumption at 2.5 V of supply voltage that makes it suitable& N) H; @+ f) ^2 x
for portable applications. A novel digital feedback principle is7 F. O$ \9 M& d- Q1 [8 }
integrated to linearize the sensor characteristics and to extend the
# \5 z; v$ }8 Y, ilinear working range.
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: {  y: n0 C: S$ [( l. eA microscopic four-point probe 4PP for resistivity measurements on thin films was designed and
5 K$ f( i3 B% J; pfabricated using the negative photoresist SU-8 as base material. The device consists of four
  S3 `5 L4 E& U. s( |; F9 Nmicroscopic cantilevers, each of them supporting a probe tip at the extremity. The high flexibility of
, ?9 ^* O* _8 d* Z7 J4 w, O! kSU-8 ensures a stable electrical point contact between samples and probe tip with all four electrodes
8 R; \  U& ?! `8 i( teven on rough surfaces. With the presented surface micromachining process, 4PPs with a' B$ b7 k, r; U" r
probe-to-probe spacing of 10–20 m were fabricated. Resistivity measurements on thin Au, Al, and
1 ~& K" W% h* {6 f+ R8 L) w5 hPt films were performed successfully. The measured sheet resistances differ by less than 5% from% h7 [/ w) e" i0 ]( G+ J
those obtained by a commercial macroscopic resistivity meter. Due to the low contact forces6 T- \' T5 F7 R) {& E3 U
Fcont10−4 N, the 4PP is suitable to be applied also to fragile materials such as conducting
3 u+ L* A; u1 Y, ?/ w6 B4 q2 ~polymers. Here the authors demonstrate the possibility of performing resistivity measurements on
4 {% I7 W3 L; ~/ Q2 {4 D/ E100-nm-thick pentacene C22H14 films with a sheet resistance Rs106 /. © 2005 American2 b) z6 N8 `( F/ l; g
Institute of Physics.
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8 V- v$ L9 b( ^: OWe present here a novel concept to perform NMR spectroscopy: Confining the sample within0 g% Z0 s8 ~% j7 ~3 k8 a
artificial vesicles, which are structured on the surface of a microfabricated planar detection
  E2 N# ^8 Y' e( `& |" Acoil. Different vesicle patterns show the improvement of the NMR performance, when
# s- f$ u6 W+ [; Fstructuring the sample in areas of homogenous RF field.* }% k% |4 p0 C7 v0 m
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3 u7 K% ~, |) l- k* HWe developed an inductive system to measure the surface concentration of superparamagnetic
4 Z  A5 F* A  ]. ~3 z% T; a( V1 Qmicrobeads resulting from a bioassay. Our tabletop apparatus, tested with Dynal MyOne™8 N1 V: @$ P  n# K8 Y9 R' l: x
microbeads, has a detection limit of about 1000 beads/Hz1/2 i.e., about 21010 Bohr magnetons.+ E& J. a* r5 u/ W5 ]
The system can measure surface concentrations from 0.01% to 100% over the 6 mm2 sensitive area, P* s* w$ w8 k) E6 V8 Y' J
with an integration time of 1 s. © 2005 American Institute of Physics.
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4 U% [( j9 c( P0 p; k[ 本帖最後由 mt7344 於 2007-6-11 10:47 PM 編輯 ]

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發表於 2008-4-5 22:07:06 | 只看該作者
推推,我想看paper^^感謝大大唷~~
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發表於 2015-6-6 07:32:26 | 只看該作者
探討『磁力』相關的論文嗎?值得一看,甘溫啦。
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