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發表於 2010-11-11 08:51:29
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Program
( s- @6 w. t% {1 N. S4 ONovember 11, 2010 (Thursday) ' |$ [; f5 L5 ~ A0 X6 u
09:00~09:30 Registration
$ E" `: L0 ]% J09:30~09:35 Opening/ Dr. Yi-Jen Chan, ITRI
' h/ \" f! P7 c/ \: ?; F$ `Session A:System Development
9 B$ R" W& Q1 z09:35~10:15 NAND Flash memory cost, performance, and technical challenges beyond 25nm generation Dr. Henry Chien Sandisk
2 u8 U8 D! ?) s- G! h10:15~10:55 Future opportunities and challenges for NAND flash in Embedded Applications Dr. Robert Hsieh Silicon motion
. ]% N+ l8 r0 s, F- M: |) D10:55~11:15 Break
$ z: B( `+ c# X! m2 P: u1 |11:15~11:55 Requirements and Challenges for Nonvolatile High Density Memory Based on Resistance Change Dr. Kyu Min Intel ' k# L% H" W6 j9 g* m, [
11:55~13:30 Lunch
+ d+ x- A5 R) V- E- {Session B:MRAM + U9 I4 x' p# v- p/ k; D) m1 W
13:30~14:10 Thermally Assisted MRAM and STT-RAM ”Dr. Jean-Pierre Nozières”Crocus
9 W" d2 r) ]/ j5 [9 P/ e2 X) i% b14:10~14:50 MRAM Technology for Embedded Application in Logic Integrated Circuits Prof. Naoki Kasai Tohoku University
2 B1 f* F: D6 C4 N. V7 B5 ~- o14:50~15:30 Spin-RAM for Normally-Off Computing Dr. Koji Ando AIST 5 ^& p2 B7 H, T
15:30~15:50 Break , Z0 N0 h# b2 s5 u4 B- Q
Session C:PCM 0 @3 j' T5 F: h% t% P
15:50~16:30 Phase Change Memory Technology Status and Future Developments Dr. Agostino Pirovano Numonyx
8 H, ^2 i' H0 U, U# H1 L1 S$ e' U16:30~17:10 Design Challenges in Multi-Level Phase Change Memory Dr. Jing Li IBM 2 u) E6 n) K2 V( D/ c0 F& [$ u' C
18:00~20:00 Banquet # R4 [* T% `# U8 p# l/ j
November 12, 2010 (Friday)
" m( R; ~' u2 [) PSession D:RRAM ! Z3 U# K8 `' k; a0 |
09:00~09:40 Bipolar Resistive Switching: Mechanisms and Scaling Dr. Rainer Bruchhaus ”RWTH-Aachen University” 6 \+ E) k$ r7 V- q, I O
09:40~10:20 Switching and Reliability Characteristics of Transition Metal Oxide based RRAM Device Dr. Moon Sig Joo Hynix
, ^& r T: s1 P5 w% e' u9 u10:20~10:40 Break
( L( p. t1 w9 N1 E0 _8 ], y10:40~11:20 Impacts of oxygen vacancy on interfacial band diagrams in perovskite-oxide resistive switching junctions Dr. Akihito Sawa AIST
. R1 _9 f z }7 l11:20~12:00 Electrical and Reliability Characteristics of RRAM for Cross-point Memory Applications Prof. Hyunsang Hwang GIST / e2 [' t. o: @6 p A- B
12:00~13:00 Lunch
: t& M; E' L8 L9 z) w0 a$ H0 ]費 用: $ U) ~: _) T2 A3 d6 e
Registration Fee含稅、講義、午餐及茶點 ! f3 ~) U" O6 `" L
一般人士 NT$ 5,000
) o9 E/ w1 K' P6 A$ A" |合作廠商 NT$ 4,000
" c% z8 ]- [9 t, Q# L; y工研院同仁NT$ 3,000 8 o1 G0 O0 a4 P" W/ {& T
在學學生NT$ 2,500 . D/ i" W P; O& G, }
(憑學生證)
! Z0 B, h2 @/ o- b0 }$ h/ UAdditional Banquet Ticket NT$ 1,500
' d7 I# T1 N" D7 C2 f% Z' m※因座位有限,請儘早報名,額滿後將不再接受報名
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. h1 M& q- c9 b1 i! u: `網路報名:網址 http://nnvm.itri.org.tw |
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