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2#
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樓主 |
發表於 2010-6-25 08:50:33
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Abstract -- The diode operated in forward-biased condition has3 a) _ h( U: T+ a! r
been widely used as an effective on-chip ESD protection device at S, U( N9 Y4 O7 [% ^- [$ \
GHz RF and high-speed I/O pads due to the small parasitic$ U; h- c% q& i( e0 y( a S0 ]
loading effect and high ESD robustness in CMOS integrated: d' Y/ `8 {% L3 a3 p( u
circuits (ICs). This work presents new ESD protection diodes% z! \& C. g V/ J2 b; U! q
realized in the octagon, waffle-hollow, and octagon-hollow layout
$ R7 z" Y% t' Z1 j! h' t5 qstyles to improve the efficiency of ESD current distribution and+ m7 i1 e* J& X
to reduce the parasitic capacitance. The new ESD protection2 Z" S, q; \8 Q# U! T
diodes can achieve smaller parasitic capacitance under the same- S/ d y0 P3 }+ Q
ESD robustness level as compared to the waffle diode. Therefore,1 }; U7 D+ J1 `) X3 Z7 f
the signal degradation of GHz RF and high-speed transmission
9 m9 s5 N0 ~) l0 G1 @1 Rcan be reduced due to smaller parasitic capacitance from the new
8 W5 R- j. u" I* j4 g- t& rproposed diodes. |
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