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發表於 2010-6-25 08:50:33
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Abstract -- The diode operated in forward-biased condition has; X0 n" c2 w2 K
been widely used as an effective on-chip ESD protection device at
8 E1 ^( T4 @/ K: t$ ~3 }' zGHz RF and high-speed I/O pads due to the small parasitic
( K. W9 _2 u- B5 jloading effect and high ESD robustness in CMOS integrated x! q6 J) N- Y" @) I( {
circuits (ICs). This work presents new ESD protection diodes
( U; r6 V) g" k2 r1 Prealized in the octagon, waffle-hollow, and octagon-hollow layout
! ]" u1 o0 b- R( R4 J# Ustyles to improve the efficiency of ESD current distribution and- g& J9 u# l( O9 ~# \4 j
to reduce the parasitic capacitance. The new ESD protection: b l; L) `9 S
diodes can achieve smaller parasitic capacitance under the same
) s6 w" w/ S' W% gESD robustness level as compared to the waffle diode. Therefore,
" H4 g' s' O/ A& U, Pthe signal degradation of GHz RF and high-speed transmission! T1 t- Y* w6 j; S6 X; m" l- G
can be reduced due to smaller parasitic capacitance from the new
5 }, O6 x& f+ x( S N; u3 L. g6 e+ y wproposed diodes. |
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