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發表於 2010-6-25 08:50:33
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Abstract -- The diode operated in forward-biased condition has
7 r0 V/ n5 {" }/ rbeen widely used as an effective on-chip ESD protection device at
5 j; S+ @1 B3 Q4 u# YGHz RF and high-speed I/O pads due to the small parasitic
# ~0 C) t1 o( t7 Q- c& Sloading effect and high ESD robustness in CMOS integrated
: p) Z% Q F9 B) |* _circuits (ICs). This work presents new ESD protection diodes
2 s2 z( z) a1 b! L& J+ \: O `4 Nrealized in the octagon, waffle-hollow, and octagon-hollow layout
* {8 V5 Z1 ?7 x0 Cstyles to improve the efficiency of ESD current distribution and
+ t' c% q K/ n: ?2 _% ~to reduce the parasitic capacitance. The new ESD protection) o% D: I& D' ~# |
diodes can achieve smaller parasitic capacitance under the same Z3 X8 l. D2 y* j" M8 o4 G8 K- E! c
ESD robustness level as compared to the waffle diode. Therefore,9 `' c3 h7 }: f9 A5 m9 V. d8 U. x x" `
the signal degradation of GHz RF and high-speed transmission h7 P( p6 |" Z2 _; }4 R( n
can be reduced due to smaller parasitic capacitance from the new
6 U3 d) T* q; _7 bproposed diodes. |
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