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發表於 2010-6-25 08:50:33
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Abstract -- The diode operated in forward-biased condition has
' c5 n* g' ]' H/ X0 Z0 Ibeen widely used as an effective on-chip ESD protection device at1 C# ?" y9 u8 f" h g
GHz RF and high-speed I/O pads due to the small parasitic1 T. z+ ]1 V G# R7 P
loading effect and high ESD robustness in CMOS integrated
5 F o# S& f8 fcircuits (ICs). This work presents new ESD protection diodes* P2 r+ m; f' o! b
realized in the octagon, waffle-hollow, and octagon-hollow layout- n/ _. e2 I; b3 }3 t5 K( \: u
styles to improve the efficiency of ESD current distribution and
( Q. g; k4 R% x. S7 Zto reduce the parasitic capacitance. The new ESD protection( _) S# P& w. x2 C
diodes can achieve smaller parasitic capacitance under the same2 _! L+ x5 ~$ w' w. |
ESD robustness level as compared to the waffle diode. Therefore,
" G' Q6 m/ x' j2 \the signal degradation of GHz RF and high-speed transmission
* T8 M" e1 C: n7 A. p" T$ W( jcan be reduced due to smaller parasitic capacitance from the new
3 f! g! b( a; D9 _0 Mproposed diodes. |
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