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發表於 2010-6-25 08:50:33
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Abstract -- The diode operated in forward-biased condition has
+ T- ~1 B( E# ^- ~7 m' ~been widely used as an effective on-chip ESD protection device at+ j" q5 B, f% ]! ~! T2 B5 R) \
GHz RF and high-speed I/O pads due to the small parasitic
0 D6 v2 Y* d4 floading effect and high ESD robustness in CMOS integrated
& d! t! q+ b1 K" ^, I# Pcircuits (ICs). This work presents new ESD protection diodes; Q# m# Q5 F/ @% Q" A6 J
realized in the octagon, waffle-hollow, and octagon-hollow layout
8 Q4 x' v: O g T0 J$ |5 ustyles to improve the efficiency of ESD current distribution and2 B' D9 ^5 B0 c/ E9 K
to reduce the parasitic capacitance. The new ESD protection' g" W1 }" S# h3 J
diodes can achieve smaller parasitic capacitance under the same
0 V, k' a8 e! c# y9 N/ Y/ V9 UESD robustness level as compared to the waffle diode. Therefore,
* U% M* g; V( r: Xthe signal degradation of GHz RF and high-speed transmission# _& d4 k. m9 I }4 {" k/ [* d
can be reduced due to smaller parasitic capacitance from the new/ K( p: S' e4 g
proposed diodes. |
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