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Per my experience ,Diodes + RC-Control , inverter and PowerClamp is better for out pad3 {6 J* t1 L* k8 w
Generally speaking ,the root cause of ESD failed is from below.0 ^( l5 {4 S) I$ w/ {! L
<i>clamp NMOS's ability.
5 U2 X: p/ V, m6 t+ s<ii>clamp NMOS's turn-on rate.
2 Q) Y0 M' x! `<iii>Not follow design rule.......................6 g* K4 }2 t* W! x; c2 b/ d
As we know ,RC-control is to keep clamp NMOS off when IC is on normal operation.(us)6 w; @; p1 S) \/ K0 H
When sufferred ESD pulse(ns),GGNMOS be turned on by coupling .
) }9 @; s4 X2 w9 j, SIf adding inverter between RC and clamp NMOS,it will speed up clamp NMOS turned on.8 v" W, X9 B4 V; R6 \" } u
Just for reference !!! |
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發表於 2010-5-10 14:38:41
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