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For ESD test (HBM) K+ H- p7 V3 \& `/ P( }+ I
The following are the test combination:
9 ]% H* c. \& |1. Power to Power
" v4 q; T! [9 m7 r4 Q! r" o2. Power to Ground8 c% s$ }( i1 c. B6 S# _
3. IO to Power
& N$ J+ H- z7 p# L# n( {4. Io to Ground
- l# E& a( e0 i% S7 o, i5. IO to IO
. v8 Z9 |4 Z" e; n" `6 h( T+ L(different power domain need to be treated as different power. For ground usually you can treat as one group_silicon use substrate as common ground. But if you measure two different ground pin/ball > 2ohms. It should be seperated as 2 grond.)
( j- e" {7 `* M" Y. h& A# }
" ^( T7 m' n" N K" Fthe total zap time fomula will be~ 2(+/- polarity) X (IO#X(P#+G#)+IO#+P#X(P#-1)X(P#-2)X...X1+P#XG); p% G8 h* i2 o8 D) y0 t+ k
For example: You have IO1/IO2/IO3/P1/P2/G1
+ c9 U% |1 @/ m' k+ V: V( \# ^2x((3X(2+1)+3+2X1+2X1)=25(multiple the zap interval)
! ?% ]* j# H, V5 m2 xSo for high pin count it will take a lot of time. But it won't take more than a week(for one chip). ' E) J) z) `% ?0 i1 M) o
4 n1 {- Q8 x3 Z4 ^( Q+ Y% L+ \/ R) V* b
For your reference. |
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發表於 2008-5-21 12:14:35
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