|
2#
樓主 |
發表於 2010-6-25 08:50:33
|
只看該作者
Abstract -- The diode operated in forward-biased condition has
7 a# f! u+ O7 [. T2 ^been widely used as an effective on-chip ESD protection device at
5 e, D' m4 B5 L) dGHz RF and high-speed I/O pads due to the small parasitic
3 C# M- w4 {4 N" ~% T+ zloading effect and high ESD robustness in CMOS integrated
8 s; ~5 ~# ]* u$ f; {0 d6 lcircuits (ICs). This work presents new ESD protection diodes
- N! x: f! A/ e6 t& Brealized in the octagon, waffle-hollow, and octagon-hollow layout' x# k, t3 l9 c
styles to improve the efficiency of ESD current distribution and
+ [, R1 e' \; wto reduce the parasitic capacitance. The new ESD protection+ v! _& y* c" s3 I1 `
diodes can achieve smaller parasitic capacitance under the same7 ]1 ]3 I, A& ]5 p0 G$ o
ESD robustness level as compared to the waffle diode. Therefore,
9 @0 f5 N8 H0 ]: `the signal degradation of GHz RF and high-speed transmission
; z2 w! b* }/ x3 v! G. `can be reduced due to smaller parasitic capacitance from the new
9 Y# X- M- [( A# Jproposed diodes. |
|