|
A novel ESD protection design for radio-frequency (RF)
4 z+ Q5 d+ n5 ]% X" X8 J1 Bdifferential input/output (I/O) pads is proposed and successfully# X [7 ]! i1 Y9 Z. m
applied to a 5-GHz differential low-noise amplifier (LNA) in a
: K5 h% h' }! y/ Z130-nm CMOS process. In the proposed ESD protection design,! } F( x9 ]4 G
an ESD bus and a local ESD clamp device are added between the2 a2 }( _: W0 w# G; q3 V
differential input pads to quickly bypass ESD current, especially
1 J1 [8 f3 a) o L [" ~1 y! |under the pin-to-pin ESD-stress condition. With 10.3-mW power
* R1 N" r% q, c+ I# z( Tconsumption under 1.2-V power supply, the differential LNA
# ~# M% E9 r, p% ^with the proposed ESD protection design has the human-bodymodel
* z. ~. J: s! g) }(HBM) ESD robustness of 3 kV, and exhibits 18-dB power- [) g* O0 D( b0 a; n+ \) r' I
gain and 2.62-dB noise figure at 5 GHz. Experimental results
8 b H _5 J( t7 ?6 F$ Dhave demonstrated that the proposed ESD protection circuit can
$ _2 ] \* h0 I7 i" _be co-designed with the input matching network of LNA to3 q2 j$ a; d7 Q4 ~' D1 K
simultaneously achieve excellent RF performance and high ESD robustness.
! {7 Y9 t% g" o5 ?( r+ m* n. A" J- K9 T
|
本帖子中包含更多資源
您需要 登錄 才可以下載或查看,沒有帳號?申請會員
x
|