標題: Optimization on ESD Clamp Circuits in a 0.13-μm Technology [打印本頁] 作者: semico_ljj 時間: 2008-11-26 09:58 PM 標題: Optimization on ESD Clamp Circuits in a 0.13-μm Technology Optimization on NMOS-Based Power-Rail ESD Clamp ( J& B6 X- |! v1 ZCircuits with Gate-Driven Mechanism in a 0.13-μm% e- ?2 G5 r! q- ?& ?! |' b/ h
CMOS Technology' g7 s: c" c8 [+ ^: F$ S
! u+ k1 v; A( T' k. f( H/ MAbstract—NMOS-based power-rail ESD clamp circuits with gate-driven mechanism have been widely used to obtain the9 I$ o- ?& e+ c7 [4 x y% W
desired ESD protection ability. All of them are based on a similar circuit scheme with 3-stage inverters to drive the ESD clamp NMOS transistor with large device dimension. In this work, the designs with 3-stage-inverter and 1-stage-inverter controlling circuits have been studied to verify the optimal circuit schemes in NMOS-based power-rail ESD clamp circuits. ! @* H# d2 `6 o) I7 r7 W0 R& h % Z$ I' K3 Y6 m7 O( r5 F注意：内容有一定深度，初学者可能看起来有些困难。7 [* u+ {8 T; `8 @' g Z
( w7 A$ E' U: R2 g# m5 w$ G7 f0 y9 V作者: semico_ljj 時間: 2008-11-26 09:59 PM
IV. CONCLUSION2 }4 o! x9 x1 m* D
The designs with 3-stage-inverter and 1-stage-inverter & R. M0 z( \8 e+ [+ k) B. a5 Vcontrolling circuits have been studied to verify the optimal 9 K1 N8 R+ Y6 y. j. R. _& S: ~design schemes in NMOS-based power-rail ESD clamp ( F& b, X4 [+ Y4 ^( J {circuits. In addition, two ESD clamp NMOS transistors, # l; c5 T$ T0 h' p# hhaving snapback and no snapback operations, also were codesigned5 ^+ l: `5 b; Y* N1 H
with different controlling circuits to realize the$ J/ C, l# o% M! p V
impact on their required performance. According to the) g. y/ X. E1 [' H7 m$ A, X
experiments and analyses, the 3-stage inverters can slightly. t6 Z5 e4 z. t! q- A
increase the ESD robustness, but they also can dramatically5 [! S8 S ?* _* v
sacrifice the mis-trigger and latch-on immunity. The 1-stage i- b5 j! S6 r
inverter should be an appropriate and reliable candidate for the ) B" o/ i( w! K! L, M) b9 A% Tpower-rail ESD clamp circuits.作者: aicder 時間: 2008-12-7 09:38 AM
very good!! j# V, Y6 i& o
DDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDDD作者: kevin5461 時間: 2009-1-15 05:54 PM
好東西~~謝謝這位大大的分享~~~~~~~~~~~~~作者: layes2 時間: 2009-7-30 10:19 AM
還要回復啊。希望能學到一些東西，謝謝！作者: jstsai 時間: 2009-8-28 08:22 PM
very useful, Thanks for your sharing...........作者: chkd002 時間: 2010-6-29 02:10 PM
正在學這方面的知識，多謝分享好東西！