標題: 借鉴一下RF ESD Design in 130nm CMOS [打印本頁] 作者: semico_ljj 時間: 2008-11-1 11:05 PM 標題: 借鉴一下RF ESD Design in 130nm CMOS An ESD-Protected 5-GHz Differential Low-Noise Amplifier in a 130-nm CMOS Process , N# z* | X9 E7 ~% ]( s8 I* V5 X, L' p1 q( O
Abstract- A novel ESD protection design for radio-frequency (RF) differential input/output (I/O) pads is proposed and successfully ]: E5 I) u k2 ?; J8 capplied to a 5-GHz differential low-noise amplifier (LNA) in a 130-nm CMOS process. In the proposed ESD protection design,$ `. [3 B9 |- B: r- Z1 t! x
an ESD bus and a local ESD clamp device are added between the differential input pads to quickly bypass ESD current, especially; f( u& q! Q! g5 y4 ]8 D
under the pin-to-pin ESD-stress condition. With 10.3-mW power consumption under 1.2-V power supply, the differential LNA % g0 d. \3 W3 l; swith the proposed ESD protection design has the human-bodymodel (HBM) ESD robustness of 3 kV, and exhibits 18-dB power gain and 2.62-dB noise figure at 5 GHz. Experimental results have demonstrated that the proposed ESD protection circuit can be co-designed with the input matching network of LNA to simultaneously achieve excellent RF performance and high ESD robustness.4 s1 A! T0 h' G6 O
6 B W: Y r! H" d* G作者: Chandler_Tseng 時間: 2009-10-16 10:18 AM
This is what I need document.... ; ~3 }2 ]/ M8 A: m7 R% N+ }* l+ S4 V# {% e( a0 f
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Thanks.作者: ksj116 時間: 2010-2-5 02:10 PM
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