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標題: Layout Optimization on ESD Diodes for Giga-Hz RF and High-Speed I/O Circuits [打印本頁]
作者: semico_ljj    時間: 2010-6-25 08:49 AM
標題: Layout Optimization on ESD Diodes for Giga-Hz RF and High-Speed I/O Circuits
Layout Optimization on ESD Diodes for Giga-Hz RF and High-Speed I/O Circuits
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作者: semico_ljj    時間: 2010-6-25 08:50 AM
Abstract -- The diode operated in forward-biased condition has7 @2 }+ |2 b. b( Q
been widely used as an effective on-chip ESD protection device at
3 i& s5 r. N. I- AGHz RF and high-speed I/O pads due to the small parasitic
- ?6 Q# d" `' S/ l% bloading effect and high ESD robustness in CMOS integrated" g  H( {  F5 s; `  I: {
circuits (ICs). This work presents new ESD protection diodes7 E) @* y3 X' ?- q2 E- L+ X
realized in the octagon, waffle-hollow, and octagon-hollow layout
, d0 J% ^; J- s6 t4 Istyles to improve the efficiency of ESD current distribution and
6 C  s, \5 U: o8 E2 }to reduce the parasitic capacitance. The new ESD protection
0 H0 x0 {8 @: y9 N4 Y  `diodes can achieve smaller parasitic capacitance under the same
9 V4 a) R/ q0 o) i+ `5 eESD robustness level as compared to the waffle diode. Therefore,
9 t9 W7 E8 w' L4 c4 ethe signal degradation of GHz RF and high-speed transmission/ z: F! o& [. V9 M+ A
can be reduced due to smaller parasitic capacitance from the new
& R0 w& j0 |4 ]: o6 z' sproposed diodes.
作者: xp212125o    時間: 2010-7-28 01:45 PM
看起來有幫助# [$ `; s6 s# X" @" D/ d
感謝分享
% {4 B3 v3 T/ E4 N' S先下載來看看7 ?- D& }2 B+ s6 v6 B( ]0 Q
thank you ~
作者: linyuejing    時間: 2010-8-21 09:55 AM
下載來看看
  S& [& l% d: h7 \6 L下載來看看
' d; ]6 D, E2 o/ R下載來看看9 y$ @$ g; |& H9 u+ ^- V7 Z/ {. K
下載來看看
/ C- @! T! ~- h0 H2 a4 ]. v' N3 l- D應該有幫助
. R  _) U1 T! Y7 S6 b9 ^/ b謝謝囉
作者: caesarxl    時間: 2010-8-24 02:58 PM
谢谢楼主分享，非常感谢
作者: oika_51    時間: 2010-9-10 03:49 PM
看起來有幫助
& n4 \' g: K5 R感謝分享
作者: linger809    時間: 2010-9-11 05:00 PM
Abstract -- The diode operated in forward-biased condition has
. U9 s( w- W0 J( p( j8 ~been widely used as an effective on-c ...
" q) ^0 q1 {# n3 Z+ f- ^. Tsemico_ljj 發表於 2010-6-25 08:50 AM

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不知道这种形式的ＩＯ有没有经过测试，实际的效果和预想的有多少的差别，thanks!
作者: oscargo    時間: 2011-6-7 05:02 PM
正為ESD耐受度傷腦筋----
作者: zhifj86    時間: 2012-3-8 02:19 PM
thank you very much for your sharing
作者: sslin    時間: 2021-8-13 05:43 PM
謝謝大大的分享~~知識因分享而壯大！
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~只有站在巨人的肩膀上才不會被食人族吃了!



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