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標題: CVD Diamond for Electronic Devices and Sensors [打印本頁]

作者: chinwei    時間: 2009-4-20 11:12 AM
標題: CVD Diamond for Electronic Devices and Sensors
Description9 F. J" G& W# |# }( J
Synthetic diamond is diamond produced by using chemical or physical processes. Like naturally occurring diamond it is composed of a three-dimensional carbon crystal. Due to its extreme physical properties, synthetic diamond is used in many industrial applications, such as drill bits and scratch-proof coatings, and has the potential to be used in many new application areas
  `4 g1 N) R/ u4 |# v0 R6 `A brand new title from the respected Wiley Materials for Electronic and Optoelectronic Applications series, this title is the most up-to-date resource for diamond specialists. Beginning with an introduction to the properties of diamond, defects, impurities and the growth of CVD diamond with its imminent commercial impact, the remainder of the book comprises six sections: introduction, radiation sensors, active electronic devices, biosensors, MEMs and electrochemistry. Subsequent chapters cover the diverse areas in which diamond applications are having an impact including electronics, sensors and actuators and medicine.
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作者: chinwei    時間: 2009-4-20 11:13 AM
Contents  M& B, H% Y' [, c% n6 @1 K& D

+ A; w( P% b7 j/ RSeries Preface.
$ H. }$ V* y, E8 ]Preface. ! P0 a5 ?( E: Z5 K+ f
6 D& J) z$ a5 @/ t0 @8 [
List of Contributors.
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Basic Properties, Defects and Impurities, Surface properties and Synthesis.
5 \5 T$ ~* k) W1 I" i, E) Q
' m; {) P* |3 @9 I& c) v" [1 Basic Properties of Diamond: Phonon Spectra, Thermal Properties, Band Structure (Gordon Davies). % E& E# c6 s1 m, o

# V" `+ J# \" i: b0 a( N2 Transport Properties of Electrons and Holes in Diamond (Jan Isberg). 1 E: U$ ~' z5 P' I* c9 h
! D& A- ?- ~+ `9 \0 B# Z
3 Point Defects, Impurities and Doping (Alison Mainwood). 2 o# H: }" f" Z) `$ u- [
3 t0 h7 [( s& s. N2 i
4 Surface Conductivity of Diamond (Lothar Ley). . k) J. o2 Z- H

! {6 Y4 j6 }: f3 k/ j5 Recent Progress in the Understanding of CVD Growth of Diamond (J.E. Butler, A. Cheesman and M. N. R. Ashfold).
7 ~8 Y) V/ K' O; X3 p
- d. U" f, [0 ^: I+ y6 Heteroepitaxial Growth (M. Schreck). 8 V) W. e6 F% m( ~

7 S3 i& K4 j, O3 jRadiation Sensors.
& j8 H+ m3 N% T6 @! D1 D+ I" y, _0 f: Z8 p2 [& t1 [; Z
7 Detectors for UV and Far UV Radiation (Alan T. Collins). 7 c8 D: v1 l) V. k. m

6 J; c" N: A2 D/ P* D  ~8 Diamond Radiation Sensors for Radiotherapy (Mara Bruzzi).
% y' T3 E; [! A& F& K
9 [+ j; R9 P7 O1 n, T; P7 ~  Z0 P% ~9 Radiation Sensors for High Energy Physics Experiments (H. Kagan and W. Trischuk). # J, V  B. [2 q- d1 }, S3 ^
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10 CVD-Diamond Detectors for Experiments with Hadrons, Nuclei, and Atoms (E. Berdermann and M. Ciobanu).
) Q4 u/ Y! A/ G6 W
' T  `/ D( ~5 v! x# f$ e3 ^1 W) W11 Neutron Detectors (G. Verona-Rinati). % s5 G! ~+ n3 ^% w& T  X
9 v) z6 G4 I# B3 e* ]; h
Active Electronic Devices.
+ w+ K! t3 w9 D# L6 R, S* o& J
/ B& h- F1 ^2 u7 M12 High-Power Switching Devices (Jan Isberg).
$ n2 F9 d8 H3 w6 g
& P/ v; H& j7 L+ ^, y: G/ F$ d13 H-Terminated Diamond Field-Effect Transistors (Makoto Kasu). " U8 G: z2 ?, ^& a9 q8 K% |

8 E- G8 M: m, O& i* Q14 Doped Diamond Electron Devices (E. Kohn and A. Denisenko). 3 c8 _9 ?' O* o4 H$ O

- `+ {( X4 s/ {1 I" S15 Optoelectronic Devices Using Homoepitaxial Diamond p –n and p –i –n Junctions (Toshiharu Makino and Hiromitsu Kato).
% \9 N3 ^5 }5 g* V& _4 n
, T9 F5 C. q7 O- C1 s5 AElectrochemical and Biological Sensors.
3 c5 r& z  o6 x9 o& l0 ^' L7 H4 M) ^8 g  ~  L; Z
16 Biofunctionalization of Diamond Surfaces: Fundamentals and Applications (J. A. Garrido).
2 v0 a, f% C8 P9 g
) H* ?3 R' [! Y) g* x17 Diamond Electrochemical Sensors (John S. Foord). ! ^& h3 u5 S. _$ L$ R2 Z7 i2 m

4 k. w* p0 e  _1 H# ^7 T9 ~Micro-Electro-Mechanical Systems. ' h0 |- c) Z3 y5 K1 |
* G; u( h  I8 g% e9 V0 p+ n7 ~: [
18 CVD Diamond MEMS (J. Kusterer and E. Kohn).
8 @7 s" Q1 K0 O' c1 \7 ?1 b" q
* v% b4 [1 [9 jSuperconductivity in CVD Diamond.
: `( P* G% n& |7 b- l/ c1 [. H9 p0 n: n! u# t' ]- S6 n7 W* h9 F
19 Superconductivity in Diamond (Yoshihiko Takano). . }, l6 Q9 Y8 C
3 a, f+ K5 f4 [
Index.
作者: chinwei    時間: 2009-4-20 11:13 AM
Author
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$ D3 C# y. p/ r0 {, ZDr. Ricardo Sussmann is a technical consultant and a senior research fellow in the solid-state group of the physics department at King’s College London (UK). He is the former head of R&D at DeBeers Industrial Diamond Division. His research areas include processing of electronic components and characterization, synthesis and growth of inorganic semiconductors. He has published numerous papers in well-known scientific journals and has obtained numerous patents on ideas related to CVD diamond. He is on the committee of the annual European Diamond Conference.
作者: chinwei    時間: 2009-4-20 11:31 AM
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[ 本帖最後由 chinwei 於 2009-4-20 12:11 PM 編輯 ]




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